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| MPSA42 / MPSA43 MPSA42 / MPSA43 NPN Version 2005-06-17 Power dissipation Verlustleistung E BC High voltage Si-epitaxial planar transistors Hochspannungs-Si-Epitaxial Planar-Transistoren NPN 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 9 18 2 x 2.54 Dimensions / Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Base current - Basisstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCEO VCBO VEBO Ptot IC IB Grenzwerte (TA = 25C) MPSA42 300 V 300 V 6V 625 mW 1) 500 mA 100 mA -65...+150C -65...+150C MPSA43 200 V 200 V Tj TS Characteristics (Tj = 25C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 160 V Emitter-Base cutoff current - Emitterreststrom IB = 0, VEB = 6 V IB = 0, VEB = 4 V MPSA42 MPSA43 MPSA42 MPSA43 IEB0 IEB0 VCEsat VCEsat - - - - MPSA42 MPSA43 ICB0 ICB0 - - Kennwerte (Tj = 25C) Typ. - - - - - - Max. 100 nA 100 nA 100 nA 100 nA 500 mV 400 mV Collector saturation voltage - Kollektor-Sattigungsspannung 2) IC = 20 mA, IB = 2 mA 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gultig, wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 MPSA42 / MPSA43 Characteristics (Tj = 25C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 20 mA, IB = 2 mA DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 20 V, IE = ie = 0, f = 1 MHz Thermal resistance junction - ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren MPSA42 MPSA43 CCB0 CCB0 RthA - - - - < 200 K/W 2) MPSA92, MPSA93 3 pF 4 pF fT 50 MHz - - hFE hFE hFE 25 40 40 - - - - - - VBEsat - - 0.9 V Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] 1 Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from the case Gultig, wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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